PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管 From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V. ST Microelectronics
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
|
AP25P15GI14 AP25P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管(不适用沟道增强模式快速功率MOSFET的) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
STP40NE03L-20 5372 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE POWER MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
STB5NA80 4891 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
APL501J |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm
|
Advanced Power Technology Ltd.
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|